C2M0045170P

C2M0045170P is a C2M™ silicon carbide, N-channel enhancement mode power MOSFET. applications include solar inverters, switch mode power supplies, high voltage DC/DC converters, motor drive, pulsed power applications.

• 2nd generation SiC MOSFET technology, optimized package with separate driver source pin
• 8mm of creepage distance between drain and source, resistant to latch-up
• High blocking voltage with low on-resistance, high speed switching with low capacitances
• Reduce switching losses and minimize gate ringing
• Higher system efficiency, reduced cooling requirements
• Increased power density, increased system switching frequency
• Drain-source breakdown voltage is 1700V min (VGS = 0V, ID = 100μA, TC = 25°C)
• 3V typical gate threshold voltage (VDS = VGS, ID = 18mA, TC = 25°C)
• 40 ohm typical drain-source on-state resistance at VGS = 20V, ID = 50A, TC = 25°C
• Operating junction temperature range from -40 to 50°C

Uyarılar

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.