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Miktar | |
---|---|
1+ | 2,730 € |
10+ | 1,770 € |
50+ | 1,720 € |
100+ | 1,220 € |
250+ | 1,100 € |
500+ | 0,983 € |
1000+ | 0,907 € |
2500+ | 0,864 € |
Ürün Bilgileri
Ürün Genel Bakış
STGAP2SICSNC is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry for SiC MOSFETs. The gate driver is characterized by 4A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. This device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Applications include motor driver for home appliances, factory automation, industrial drives and fans, 600/1200V inverters, battery chargers, induction heating, welding, UPS, power supply units, DC-DC converters, power factor correction.
- High voltage rail up to 1700V, separate sink and source option for easy gate driving configuration
- 4A Miller CLAMP dedicated pin option, UVLO function, UL1577 recognized
- 3.3V, 5V TTL/CMOS inputs with hysteresis, gate driving voltage up to 26V
- Temperature shutdown protection, standby function, 4.8kVPK isolation
- Common-mode transient immunity is 100V/ns min at (VCM = 1500V, TJ = 25°C)
- Input to output propagation delay ON is 75ns typical (TJ = 25°C)
- Pulse width distortion is 20ns maximum (TJ = 25°C)
- Inputs deglitch filter is 20ns typical (TJ = 25°C)
- VDD quiescent supply current is 1mA typical (TJ = 25°C)
- Operating junction temperature range from -40 to 125°C, narrow body SO-8 package
Teknik Özellikler
1Channels
-
8Pins
Surface Mount
4A
3.1V
-40°C
75ns
-
No SVHC (21-Jan-2025)
Isolated
SiC MOSFET
NSOIC
CMOS, TTL
4A
5.5V
125°C
75ns
-
Teknik Belgeler (2)
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