IRF7748L1TRPBF

IRF7748L1TRPBF is a DirectFET™ power MOSFET. It is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. It is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and make this device ideal for high performance power converters. Application includes ideal for high performance isolated converter, primary switch socket, optimized for synchronous rectification, low conduction losses, high Cdv/dt Immunity, low profile (<lt/>0.7mm), dual sided cooling compatible, compatible with existing surface mount techniques, industrial qualified.

• Drain-to-source breakdown voltage is 60V minimum (VGS = 0V, ID = 250µA, TJ = 25°C)
• Breakdown voltage temp coefficient is 0.022V/°C typical (25°C, ID = 2mA)
• Gate threshold voltage range from 2 to 4V (VDS = VGS, ID = 250µA)
• Drain-to-source leakage current is 20µA maximum (VDS =60 V, VGS = 0V)
• Forward transconductance is 176S minimum (VDS = 10V, ID =89A)
• Total gate charge is 146nC typical (VDS = 30V, VGS = 10V, ID = 89A)
• Output charge is 82nC typical (VDS = 16V, VGS = 0V)
• Gate resistance is 1.3ohm typical (TJ = 25°C)
• Input capacitance is 8075pF typical (VGS = 0V, VDS = 50V, ƒ = 1MHz)
• DirectFET Large Can package, operating junction and storage temperature range from -55 to + 175°C

Uyarılar

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.