HMC8205BF10

HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5dBm (35W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3GHz to 6GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10. It ideals for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification. Application includes military jammers, commercial and military radar, power amplifier stage for wireless infrastructure, test and measurement equipment.

• 46dBm typical saturated output power (TA = 25°C, VDD = 50V, IDQ = 1300mA)
• Frequency range from 0.3GHz to 3GHz (TA = 25°C, VDD = 50V, IDQ = 1300mA)
• 26dB typical small signal gain (TA = 25°C, VDD = 50V, IDQ = 1300mA)
• Typical gain flatness is ±2dB (TA = 25°C, VDD = 50V, IDQ = 1300mA)
• 13dB typical return loss (input, TA = 25°C, VDD = 50V, IDQ = 1300mA)
• 12dB typical return loss (output, TA = 25°C, VDD = 50V, IDQ = 1300mA)
• 45dBm typical 4dB compressed power (TA = 25°C, VDD = 50V, IDQ = 1300mA)
• Power gain for PSAT is 20dB typical at (TA = 25°C, VDD = 50V)
• 28V to 55V supply voltage range (TA = 25°C, VDD = 50V, IDQ = 1300mA)
• 10 lead LDCC package, operating temperature range from -40°C to +85°C

Notlar

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party