HMC735LP5E

HMC735LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. The prescaler function can be disabled to conserve current if not required. Typical application includes point-to-point/multi-point radio, test equipment and industrial controls, SATCOM, military end-use.

• No external resonator needed
• Frequency range from 10.5 to 12.2GHz (Fo, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• Power output range from 14 to 1dBm (RF OUT, TA = +25°C, Vcc (RF), Vcc (DIG) = +5V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RF output is -100 dBc/Hz (typ)
• Tune voltage range from 1 to 13V (TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Supply current is 217mA (typ, Icc (RF), Icc (DIG), TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Output return loss is 8dB (typ, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Frequency drift rate is 1.4MHz/°C (typ, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• 16 lead LFCSP-EP package, operating temperature range from -40 to +85°C

Notlar

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