Low

LM5041MTC/NOPB - 

Cascaded PWM Controller, 90V-15V supply, 600 kHz, 5V/10mA out, TSSOP-16

TEXAS INSTRUMENTS LM5041MTC/NOPB

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Üretici Parça No.:
LM5041MTC/NOPB
Sipariş Kodu:
9779361
Teknik Bilgi Formu:
(EN)
Tüm Teknik Belgeleri Görüntüleyin

Ürün Bilgileri

:
TSSOP
:
-40°C
:
10mA
:
125°C
:
16Pins
:
600kHz
:
5V
:
48V
:
-
:
-
:
15V
:
Each
:
90V
:
MSL 1 - Unlimited
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Ürün Genel Bakış

The LM5041MTC/NOPB is a Pulse Width Modulated (PWM) Controller contains all of the features necessary to implement either current-fed or voltage-fed push-pull or bridge power converters. These cascaded topologies are well suited for multiple output and higher power applications. The LM5041's four control outputs include: the buck stage controls (HD and LD) and the push-pull control outputs (PUSH and PULL). Push-pull outputs are driven at 50% nominal duty cycle at one half of the switching frequency of the buck stage and can be configured for either a specified overlap time (for current-fed applications) or a specified both-off time (for voltage-fed applications). Push-pull stage MOSFETs can be driven directly from the internal gate drivers while the buck stage requires an external driver such as the LM5102. The LM5041 includes a high-voltage start-up regulator that operates over a wide input range of 15 to 100V.
  • Internal start-up bias regulator
  • Programmable line under-voltage lockout (UVLO) with adjustable hysteresis
  • Current mode control
  • Internal error amplifier with reference
  • Dual mode over-current protection
  • Leading edge blanking
  • Programmable push-pull overlap or dead time
  • Internal 1.5A Push-pull gate drivers
  • Programmable soft-start
  • Programmable oscillator with sync capability
  • Precision reference
  • Thermal shutdown
  • Green product and no Sb/Br

Uygulamalar

Power Management, Industrial, Automotive, Communications & Networking

Uyarılar

Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.