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INFINEON  BSC900N20NS3GATMA1  MOSFET Transistor, N Channel, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V

INFINEON BSC900N20NS3GATMA1

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Ürün Genel Bakış

The BSC900N20NS3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
  • Industry's lowest RDS (ON)
  • Lowest Qg and Qgd
  • World's lowest FOM and MSL 1 rated
  • Highest efficiency
  • Highest power density
  • Lowest board space consumption
  • Minimal device paralleling required
  • Environmentally friendly
  • Easy-to-design-in products
  • Qualified according to JEDEC for target application
  • Halogen-free, Green device

Ürün Bilgileri

Transistor Polarity:
N Channel
Continuous Drain Current Id:
15.2A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.077ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
62.5W
Transistor Case Style:
TDSON
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Uygulamalar

  • Industrial;
  • Audio;
  • LED Lighting;
  • Motor Drive & Control;
  • Power Management

Diğer Adıyla

BSC900N20NS3 G , SP000781780

Mevzuat ve Çevre

Nem Duyarlılığı Düzeyi
MSL 1 - Unlimited
Menşe Ülke:
Malaysia

En son önemli imalat işleminin gerçekleştirildiği ülke

RoHS Uyumlu:
Evet
Fiyat Listesi No:
85412900
Ağırlık (kg):
.0003