Low

INFINEON  BSC360N15NS3GATMA1  MOSFET Transistor, N Channel, 33 A, 150 V, 0.031 ohm, 10 V, 3 V

INFINEON BSC360N15NS3GATMA1

Resim yalnızca örnek vermeyi amaçlamaktadır. Lütfen ürün açıklamasına bakın.

Ürün Genel Bakış

The BSC360N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
  • Excellent switching performance
  • World's lowest RDS (ON)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS (ON) product (FOM)
  • MSL1 rated 2
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Normal level
  • Qualified according to JEDEC for target applications
  • Halogen-free, Green device

Ürün Bilgileri

Transistor Polarity:
N Channel
Continuous Drain Current Id:
33A
Drain Source Voltage Vds:
150V
On Resistance Rds(on):
0.031ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
74W
Transistor Case Style:
TDSON
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Ortak özelliklere göre gruplandırılmış benzer ürünleri bulun 

Uygulamalar

  • Power Management;
  • Motor Drive & Control;
  • Automotive;
  • Communications & Networking;
  • Audio

Diğer Adıyla

BSC360N15NS3 G , SP000778134

Mevzuat ve Çevre

Nem Duyarlılığı Düzeyi
MSL 1 - Unlimited
Menşe Ülke:
Malaysia

En son önemli imalat işleminin gerçekleştirildiği ülke

RoHS Uyumlu:
Evet
Fiyat Listesi No:
85412900
Ağırlık (kg):
.0003

Benzer Ürünler